View PH2625L_6936557.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1. product pro?le 1.1 general description logic level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos? technology. 1.2 features 1.3 applications 1.4 quick reference data 2. pinning information PH2625L n-channel trenchmos? logic level fet rev. 02 24 february 2005 preliminary data sheet n optimized for use in dc-to-dc converters n very low switching and conduction losses n low threshold voltage n low thermal resistance. n dc-to-dc converters n switched-mode power supplies n voltage regulators n notebook computers. n v ds 25 v n i d 100 a n q gd = 7.3 nc (typ) n q g(tot) = 32 nc (typ) n r dson 2.8 m w (v gs =10v) n r dson 4.1 m w (v gs = 4.5 v). table 1: pinning pin description simpli?ed outline symbol 1, 2, 3 source sot669 (lfpak) 4 gate mb mounting base; connected to drain mb 1234 s d g mbb076 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
9397 750 14324 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 02 24 february 2005 2 of 13 philips semiconductors PH2625L n-channel trenchmos? logic level fet 3. ordering information 4. limiting values [1] duty cycle is limited by the maximum junction temperature. [2] repetitive avalanche failure is not determined simply by thermal effects. repetitive avalanche transients should only be applied for short bursts, not every switching cycle. table 2: ordering information type number package name description version PH2625L lfpak plastic single-ended surface mounted package; 4 leads sot669 table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage (dc) 25 c t j 150 c - 25 v v dgr drain-gate voltage (dc) 25 c t j 150 c; r gs =20k w -25v v gs gate-source voltage - 20 v i d drain current (dc) t mb =25 c; v gs =10v; figure 2 and 3 - 100 a t mb = 100 c; v gs =10v; figure 2 -63a i dm peak drain current t mb =25 c; pulsed; t p 10 m s; figure 3 - 300 a p tot total power dissipation t mb =25 c; figure 1 - 62.5 w t stg storage temperature - 55 +150 c t j junction temperature - 55 +150 c source-drain diode i s source (diode forward) current (dc) t mb =25 c - 52 a i sm peak source (diode forward) current t mb =25 c; pulsed; t p 10 m s - 156 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy unclamped inductive load; i d =71a; t p = 0.1 ms; v dd 25 v; r gs =50 w ; v gs = 10 v; starting at t j =25 c - 250 mj e ds(al)r repetitive drain-source avalanche energy unclamped inductive load; i d = 7.1 a; t p = 0.01 ms; v dd 25 v; r gs =50 w ; v gs =10v [1] [2] - 2.5 mj www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
9397 750 14324 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 02 24 february 2005 3 of 13 philips semiconductors PH2625L n-channel trenchmos? logic level fet fig 1. normalized total power dissipation as a function of mounting base temperature fig 2. normalized continuous drain current as a function of mounting base temperature t mb =25 c; i dm is single pulse; v gs =10v fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage 03aa15 0 40 80 120 0 50 100 150 200 t mb p der (%) ( c) 03aa23 0 40 80 120 0 50 100 150 200 (%) i der t mb ( c) p der p tot p tot 25 c () ------------------------ 100 % = i der i d i d25 c () -------------------- - 100 % = 003aaa551 1 10 10 2 10 3 10 -1 1 10 10 2 v ds (v) i d (a) dc 100 ms 10 ms 1 ms limit r dson = v ds / i d t p = 10 m s 100 m s www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
9397 750 14324 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 02 24 february 2005 4 of 13 philips semiconductors PH2625L n-channel trenchmos? logic level fet 5. thermal characteristics table 4: thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base figure 4 --2k/w fig 4. transient thermal impedance from junction to mounting base as a function of pulse duration 003aaa552 10 -2 10 -1 1 10 10 -5 10 -4 10 -3 10 -2 10 -1 1 t p (s) z th(j-mb) (k/w) single pulse 0.2 0.1 0.05 d = 0.5 0.02 t p t p t t p t d = www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
9397 750 14324 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 02 24 february 2005 5 of 13 philips semiconductors PH2625L n-channel trenchmos? logic level fet 6. characteristics table 5: characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = 250 m a; v gs =0v 25--v v gs(th) gate-source threshold voltage i d = 1 ma; v ds =v gs ; figure 9 and 10 t j =25 c 1 1.5 2 v t j = 150 c 0.5 - - v t j = - 55 c - - 2.2 v i dss drain-source leakage current v ds =25v; v gs =0v t j =25 c - 0.06 1 m a t j = 150 c - - 500 m a r g gate resistance f = 1 mhz - 1.5 - w i gss gate-source leakage current v gs = 16 v; v ds = 0 v - 10 100 na r dson drain-source on-state resistance v gs = 10 v; i d =25a; figure 6 and 8 t j =25 c - 2 2.8 m w t j = 150 c - 3.2 4.3 m w v gs = 4.5 v; i d =25a; figure 6 and 8 t j =25 c - 3 4.1 m w t j = 150 c - 4.8 6.6 m w dynamic characteristics q g(tot) total gate charge i d = 25 a; v ds =12v; v gs = 4.5 v; figure 11 and 12 -32-nc q gs gate-source charge - 9.6 - nc q gs1 pre-v gs(th) gate-source charge - 6 - nc q gs2 post-v gs(th) gate-source charge - 3.6 - nc q gd gate-drain (miller) charge - 7.3 - nc v plat plateau voltage - 2.2 - v q g(tot) total gate charge i d = 0 a; v ds =0v; v gs = 4.5 v - 26 - nc c iss input capacitance v gs =0v; v ds = 12 v; f = 1 mhz; figure 13 and 14 -4308-pf c oss output capacitance - 1137 - pf c rss reverse transfer capacitance - 439 - pf c iss input capacitance v gs =0v; v ds = 0 v; f = 1 mhz - 4830 - pf t d(on) turn-on delay time v ds =12v; r l = 0.48 w ; v gs = 4.5 v; r g = 4.7 w -41-ns t r rise time -52-ns t d(off) turn-off delay time - 67 - ns t f fall time -30-ns source-drain diode v sd source-drain (diode forward) voltage i s = 25 a; v gs =0v; figure 15 - 0.85 1.2 v t rr reverse recovery time i s = 20 a; di s /dt = - 100 a/ m s; v gs =0v; v r =25v -47-ns q r recovered charge - 22 - nc www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
9397 750 14324 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 02 24 february 2005 6 of 13 philips semiconductors PH2625L n-channel trenchmos? logic level fet t j =25 ct j =25 c fig 5. output characteristics: drain current as a function of drain-source voltage; typical values fig 6. drain-source on-state resistance as a function of drain current; typical values t j =25 c and 150 c; v ds >i d r dson fig 7. transfer characteristics: drain current as a function of gate-source voltage; typical values fig 8. normalized drain-source on-state resistance factor as a function of junction temperature 003aaa553 0 10 20 30 40 0 0.5 1 1.5 2 v ds (v) i d (a) 1.7 1.8 10 1.9 2.2 4.5 2.5 2.1 2.4 2.3 v gs (v) = 003aaa555 0 5 10 15 20 010203040 i d (a) r dson (m w) 10 2.1 2.3 4.5 2.2 v gs (v) = 2 003aaa554 0 10 20 30 40 0 1 23 v gs (v) i d (a) 25 c t j = 150 c 03af18 0 0.5 1 1.5 2 -60 0 60 120 180 t j ( c) a a r dson r dson 25 c () ------------------------------ = www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
9397 750 14324 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 02 24 february 2005 7 of 13 philips semiconductors PH2625L n-channel trenchmos? logic level fet i d = 1 ma; v ds =v gs t j =25 c; v ds =5v fig 9. gate-source threshold voltage as a function of junction temperature fig 10. sub-threshold drain current as a function of gate-source voltage i d = 25 a; v ds = 4.5 v, 12 v and 19 v fig 11. gate-source voltage as a function of gate charge; typical values fig 12. gate charge waveform de?nitions 03aa33 0 0.5 1 1.5 2 2.5 -60 0 60 120 180 t j ( c) v gs(th) (v) max typ min 03aa36 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 0123 v gs (v) i d (a) max typ min 003aaa558 0 2 4 6 8 10 0 20 40 60 80 q g (nc) v gs (v) v ds (v) = 4.5 12 19 003aaa508 v gs v gs(th) q gs1 q gs2 q gd v ds q g(tot) i d q gs v plat www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
9397 750 14324 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 02 24 february 2005 8 of 13 philips semiconductors PH2625L n-channel trenchmos? logic level fet v gs = 0 v; f = 1 mhz v ds =0v; f=1mhz fig 13. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values fig 14. input and reverse transfer capacitances as a function of gate-source voltage; typical values t j =25 c and 150 c; v gs =0v fig 15. source (diode forward) current as a function of source-drain (diode forward) voltage; typical values 003aaa556 10 2 10 3 10 4 10 -1 1 10 10 2 v ds (v) c (pf) c iss c oss c rss 003aaa632 0 2000 4000 6000 8000 0 2 4 6810 v gs (v) c (pf) c rss c iss 003aaa557 0 10 20 30 40 0.2 0.4 0.6 0.8 1 v sd (v) i s (a) t j = 150 c 25 c www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
9397 750 14324 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 02 24 february 2005 9 of 13 philips semiconductors PH2625L n-channel trenchmos? logic level fet 7. package outline fig 16. package outline sot669 (lfpak) references outline version european projection issue date iec jedec jeita sot669 mo-235 03-09-15 04-10-13 0 2.5 5 mm scale e e 1 b c 2 a 2 a 2 bc a e unit dimensions (mm are the original dimensions) mm 1.10 0.95 a 3 a 1 0.15 0.00 1.20 1.01 0.50 0.35 b 2 4.41 3.62 b 3 2.2 2.0 b 4 0.9 0.7 0.25 0.19 c 2 0.30 0.24 4.10 3.80 6.2 5.8 h 1.3 0.8 l 2 0.85 0.40 l 1.3 0.8 l 1 8 0 wy d (1) 5.0 4.8 e (1) 3.3 3.1 e 1 (1) d 1 (1) max 0.25 4.20 1.27 0.25 0.1 1 234 mounting base d 1 c plastic single-ended surface mounted package (lfpak); 4 leads sot669 e b 2 b 3 b 4 h d l 2 l 1 a a w m c c x 1/2 e yc q q (a ) 3 l a a 1 detail x note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
9397 750 14324 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 02 24 february 2005 10 of 13 philips semiconductors PH2625L n-channel trenchmos? logic level fet 8. soldering all dimensions in mm fig 17. optimized soldering footprint sot669 (lfpak) msd864 1.10 0.85 1.27 3.81 2.05 2.15 2.00 0.075 solder lands solder resist occupied area solder paste 2.50 3.45 3.30 3.50 3.48 3.68 0.25 (2 ) 0.25 (2 ) 0.60 (3 ) 0.70 (4 ) 0.05 around (4 ) 0.90 (3 ) 2.00 2.50 3.70 4.60 4.70 5.70 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
philips semiconductors PH2625L n-channel trenchmos? logic level fet 9397 750 14324 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 02 24 february 2005 11 of 13 9. revision history table 6: revision history document id release date data sheet status change notice doc. number supersedes PH2625L_2 20050224 preliminary data sheet - 9397 750 14324 PH2625L-01 modi?cations: ? the format of this data sheet has been redesigned to comply with the new presentation and information standard of philips semiconductors. ? r dson data revised in section 1.4 quic k ref erence data and section 6 char acter istics PH2625L-01 20040428 preliminary data sheet - 9397 750 12306 - www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
philips semiconductors PH2625L n-channel trenchmos? logic level fet 9397 750 14324 ? koninklijke philips electronics n.v. 2005. all rights reserved. preliminary data sheet rev. 02 24 february 2005 12 of 13 10. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 12. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 13. trademarks trenchmos is a trademark of koninklijke philips electronics n.v. 14. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 24 february 2005 document number: 9397 750 14324 published in the netherlands philips semiconductors PH2625L n-channel trenchmos? logic level fet 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 10 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 11 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 14 contact information . . . . . . . . . . . . . . . . . . . . 12 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com

▲Up To Search▲

Price & Availability of PH2625L

	To Download PH2625L Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .